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scr / scr and scr / diode 170a 230a 250a magn-a-pak ? power modules irk. series 1 bulletin i27102 rev. a 10/97 www.irf.com features high voltage electrically isolated base plate 3000 v rms isolating voltage industrial standard package simplified mechanical designs, rapid assembly high surge capability large creepage distances ul e78996 approved this new irk serie of magn-a-paks modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are elec- trically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose applica- tions such as battery chargers, welders and plating equip- ment and where high voltage and high current are required (motor drives, u.p.s., etc.). description i t(av) @ 85c 170 230 250 a i t(rms) 377 510 555 a i tsm @ 50hz 5100 7500 8500 a @ 60hz 5350 7850 8900 a i 2 t @ 50hz 131 280 361 ka 2 s @ 60hz 119 256 330 ka 2 s i 2 ? t 1310 2800 3610 ka 2 ? s v drm / v rrm up to1600 up to 2000 up to1600 v t j range -40 to 130 o c parameters irk.170.. irk.230.. irk.250.. units major ratings and characteristics
irk.170, .230, .250 series 2 bulletin i27102 rev. a 10/97 www.irf.com parameters irk.170 irk.230 irk.250 units conditions i t(av) maximum average on-state current 170 230 250 a 180 o conduction, half sine wave @ case temperature 85 85 85 o c i t(rms) maximum rms on -state current 377 510 555 a as ac switch i tsm maximum peak, one-cycle on-state, 5100 7500 8500 a t = 10ms no voltage non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied 4300 6300 7150 t = 10ms 100% v rrm 4500 6600 7500 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 131 280 361 ka 2 s t = 10ms no voltage initial t j = t j max 119 256 330 t = 8.3ms reapplied 92.5 198 255 t = 10ms 100% v rrm 84.4 181 233 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 1310 2800 3610 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage 0.89 1.03 0.97 v (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. v t(to)2 high level value of threshold voltage 1.12 1.07 1.00 (i > p x i t (av) ), t j = t j max. r t1 low level on-state slope resistance 1.34 0.77 0.60 m w (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. r t2 high level on-state slope resistance 0.96 0.73 0.57 (i > p x i t (av) ), t j = t j max. i tm = p x i t(av) , t j = t j max., 180 o conduction av. power = v t(to) x i t(av) + r f x (i t(rms) ) 2 i h maximum holding current 500 500 500 ma anode supply=12v, initial i t =30a, t j =25 o c i l maximum latching current 1000 1000 1000 anode supply=12v, resistive load=1 w gate pulse: 10v, 100 m s, t j = 25c type number voltage v rrm v drm , maximum v rsm , maximum non-repetitive i rrm i drm max code repetitive peak reverse and peak reverse voltage @ 130c off-state blocking voltage vvm a 04 400 500 50 irk.170- 08 800 900 irk.250- 12 1200 1300 14 1400 1500 16 1600 1700 irk.230- 08 800 900 50 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 t d typical delay time 1.0 m st j = 25 o c, gate current=1a di g/dt =1a/s t r typical rise time 2.0 vd = 0,67% v drm i tm = 300 a ; -di/dt=15 a/s; t j = t j max ; vr = 50 v; dv/dt = 20 v/s ; gate 0 v, 100 ohm voltage ratings electrical specifications on-state conduction switching t q typical turn-off time 50 - 150 m s v tm maximum on-state voltage drop 1.60 1.59 1.44 v parameters irk.170 irk.230 irk.250 units conditions
irk.170, .230, .250 series 3 bulletin i27102 rev. a 10/97 www.irf.com i rrm max. peak reverse and off-state 50 ma t j =t j max. i drm leakage current v ins rms isolation voltage 3500 v 50hz, circuit to base, all termin. shorted, 25c,1s dv/ dt critical rate of rise of off-state voltage 1000 v/ m st j = t j max, exponential to 67% rated v drm t j junction operating temperature -40 to 130 o c t stg storage temperature range -40 to 150 o c r thjc maximum thermal resistance junction to case mounting surface flat, smooth and greased (per module) t mounting tourque 10% a mounting compound is recommended and the map to heatsink 4 to 6 nm tourque should be rechecked after a period of busbar to map 4 to 6 nm about 3 hours to allow for the spread of the compound wt approximate weight 500 g 17.8 oz case style magn-a-pak i p gm maximum peak gate power 10.0 w tp 5ms, t j = t j max. p g(av) maximum average gate power 2.0 w f = 50hz, t j = t j max. +i gm maximum peak gate current 3.0 a tp 5ms, t j = t j max. -v gt max. peak negative gate voltage 5.0 v tp 5ms, t j = t j max. v gt maximum required dc gate 4.0 v t j = - 40 o c anode supply = 12v, resistive voltage to trigger 3.0 v t j = 25 o c load ; ra = 1 w 2.0 v t j = t j max. i gt maximum required dc gate 350 ma t j = - 40 o c anode supply = 12v, resistive current to trigger 200 ma t j = 25 o c load ; ra = 1 w 100 ma t j = t j max. v gd maximum gate voltage that will not trigger i gd maximum gate current that will not trigger di/ dt max rate of rise of turned-on current blocking triggering thermal and mechanical specifications 0.25 v @ t j = t j max., rated v drm applied 10.0 ma @ t j = t j max., rated v drm applied 500 a/ m s@ t j = t j max., i tm = 400 a rated v drm applied 0.17 0.125 0.125 k/w per junction, dc operation r thc-s thermal resistance, case to heatsink 0.02 0.02 0.02 k/w parameters irk.170 irk.230 irk.250 units conditions parameters irk.170 irk.230 irk.250 units conditions parameters irk.170 irk.230 irk.250 units conditions
irk.170, .230, .250 series 4 bulletin i27102 rev. a 10/97 www.irf.com thyristor diode i t(av) / i f(av) @ t c v drm v rsm v rrm 170a 230a 250a v rrm v rsm @ 85c @ 85c @ 85c 1400 1500 2000 irkh170-14d20 irkh230-14d20 irkh250-14d20 1400 1500 2000 irkl170-14d20 irkl230-14d20 irkl250-14d20 1600 1700 2500 irkh170-16d25 irkh230-16d25 irkh250-16d25 1600 1700 2500 irkl170-16d25 irkl230-16d25 irkl250-16d25 1800 1900 2800 not available irkh230-18d28 not available 1800 1900 2800 not available irkl230-18d28 not available 2000 2100 3200 not available irkh230-20d32 not available 2000 2100 3200 not available irkl230-20d32 not available m 3 x irkl... 3 x irkh... 3 x i rkt.. . current-source inverters (also known as sequentially commutated inverters) use phase control (as opposed to fast) thyristors and diodes. the advantages of current source inverters lie in their ease control, absence of large commutation inductances and limited fault currents. their simple construction, illustrated by the circuit on the left, is further enhanced by the use of magn-a-paks which allow the power circuit of an inverter to be realised with 6 capacitors and 9 magn-a-paks all mounted on just one heatsink. the optimal design of current source inverters requires the use of diodes with blocking voltages greater than those of the thyristors . this departure from conventional half-bridge modules is catered for by magn-a-pak range with thyristors up to 2000v and diodes up to 3200v. current source inverters current source inverter using 9 magn-a-paks magn-a-paks suitable for current source inverters application notes for all other parameters and characteristics refer to standard irkh... and irkl... modules. sinusoidal conduction @ t j max. rectangular conduction @ t j max. devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w irk.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 irk.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irk.170, .230, .250 series 5 bulletin i27102 rev. a 10/97 www.irf.com irk t 250 - 14 d20 n 1 - module type 2 - circuit configuration (see outline table) 3 - current rating 4 - voltage code: code x 100 = v rrm (see voltage ratings table) 5 - current source inverters types 6 - none = standard devices 7 n = aluminum nitrade substrate ordering information table device code 13 45 6 2 irkl... irku... irkv... irkk... irkn... irkh... irkt... - all dimensions in millimeters (inches) - dimensions are nominal - full engineering drawings are available on request - ul identification number for gate and cathode wire: ul 1385 - ul identification number for package: ul 94v0 outline table note: to order the optional hardware see bulletin i27900
irk.170, .230, .250 series 6 bulletin i27102 rev. a 10/97 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 60 70 80 90 100 110 120 130 0 40 80 120 160 200 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction angle irk.170.. series r (dc) = 0.17 k/w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 dc 30 60 90 120 180 aver age on-state curr en t (a) maximum allo wable case temperature ( c) conduction period irk.170.. series r (dc) = 0.17 k/w thjc 0 50 100 150 200 250 300 0 40 80 120 160 200 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 irk.170.. series per junction t = 125c j 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) irk.170.. series per junction t = 125c j 2000 2500 3000 3500 4000 4500 5000 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. peak half sine wave on-state current (a) irk.170.. series per junction in itial t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 130 c no voltage reapplied rated v reapplied rrm j irk.170.. series per junction
irk.170, .230, .250 series 7 bulletin i27102 rev. a 10/97 www.irf.com fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 0 20406080100120 0 . 3 5 k / w 0 . 3 k / w 0 . 2 5 k / w 0 . 2 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 1 6 k / w maximum allowable ambient temperature ( c) r = 0 . 0 4 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 180 120 90 60 30 maximum total on-state power loss (w) total rms output current (a) conduction angle irk.170.. series pe r module t = 130c j 0 20406080100120 maximum allowable ambient temperature ( c) r = 0 . 0 2 k/ w - d e l t a r 0 . 0 4 k / w t hs a 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.170.. series single phase bridge connected t = 130c j 0 20406080100120 maximum allowable ambie nt temperature ( c) 0 . 2 5 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 1 k/ w 0 . 0 8 k / w 0 . 0 5 k / w 0 . 0 3 k / w r = 0. 0 1 k/ w - d e l t a r t h s a 0 200 400 600 800 1000 1200 1400 1600 0 100 200 300 400 500 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.170.. series three phase bridge connected t = 130c j
irk.170, .230, .250 series 8 bulletin i27102 rev. a 10/97 www.irf.com fig. 10 - current ratings characteristics fig. 11 - current ratings characteristics fig. 12 - on-state power loss characteristics fig. 13 - on-state power loss characteristics fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current 60 70 80 90 100 110 120 130 0 40 80 120 160 200 240 30 60 90 120 180 averag e on -state current (a) maximum allowable case temperature ( c) conduction angle irk.230.. series r (dc) = 0.125 k/w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 dc 30 60 90 120 180 average on-state current (a) maximum allow able cas e t emperatu re ( c) conduction period irk.230.. series r (dc) = 0.125 k/w thjc 0 50 100 150 200 250 300 350 0 50 100 150 200 250 rm s limit conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 irk.230.. series per junction t = 130c j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 dc 180 120 90 60 30 rms limit conduction per iod maximum average on-state power loss (w) average on-state current (a) irk.230.. series per junction t = 130c j 3000 3500 4000 4500 5000 5500 6000 6500 7000 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. peak half sine wave on-state current (a) irk.230.. series per junction initial t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 130 c no voltage reapplied rated v reapplied rrm j irk.230.. series per junction
irk.170, .230, .250 series 9 bulletin i27102 rev. a 10/97 www.irf.com fig. 16 - on-state power loss characteristics fig. 17 - on-state power loss characteristics fig. 18 - on-state power loss characteristics 0 20406080100120 maximum allo wable ambient temperature ( c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 3 k / w 0 . 0 6 k / w 0 . 1 2 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 2 5 k / w 0 . 3 k / w 0 100 200 300 400 500 600 700 0 100 200 300 400 500 total rms output current (a) maximum total on-state power loss (w) irk.230.. series per module t = 130c 180 120 90 60 30 j conduction angle 0 20406080100120 maximum allowable ambient temperature ( c) 0 . 0 3 k / w 0 . 0 5 k / w 0. 08 k/w 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 1 . 5 k / w r = 0 . 0 1 k / w - d e l t a r t h s a 0 150 300 450 600 750 900 1050 1200 1350 1500 0 50 100 150 200 250 300 350 400 450 180 (sine) 180 (rect) 2 x irk.230.. series single phase bridge connected t = 130c maximum total power loss (w) total output current (a) j 0 20406080100120 maximum allowable ambient temperature ( c) 0 . 0 1 k / w 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 5 k / w r = 0 . 0 0 5 k / w - d e l t a r t h s a 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 maximum total power loss (w) total output current (a) 120 (rect) 3 x irk.230.. series three phase bridge connected t = 130c j
irk.170, .230, .250 series 10 bulletin i27102 rev. a 10/97 www.irf.com fig. 19 - current ratings chartacteristics fig. 20 - current ratings chartacteristics fig. 21 - on-state power loss characteristics fig. 22 - on-state power loss characteristics fig. 23 - maximum non-repetitive surge current fig. 24 - maximum non-repetitive surge current 0 50 100 150 200 250 300 350 0 50 100 150 200 250 r ms limit con duction an gle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 irk.250.. series per junction t = 130c j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) irk.250.. series per junction t = 130c j 3500 4000 4500 5000 5500 6000 6500 7000 7500 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) irk.250.. seri es per junction at any rated load condition and with rated v applied following surge. rrm in itial t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 60 70 80 90 100 110 120 130 0 100 200 300 400 500 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction period irk.250.. series r (dc) = 0.125 k/w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction angle irk.250.. series r (dc) = 0.125 k/w thjc 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s ) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. irk.250.. series per junction initial t = 130 c no voltage reapplied rated v reapplied rrm j
irk.170, .230, .250 series 11 bulletin i27102 rev. a 10/97 www.irf.com fig. 25 - on-state power loss characteristics fig. 26 - on-state power loss characteristics fig.27 - on-state power loss characteristics 0 20406080100120 maximum allowable ambient temperat ure ( c) r = 0 . 01 k/ w - d e l t a r t h s a 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 3 k / w 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 maximum total power loss (w) total output current (a) 180 (sine) 180 (rect) 2 x irk.250.. series single phase bridge connected t = 130c j 0 20406080100120 maximum allowable am bient temperature ( c) 0 . 3 k / w 0 . 2 5 k / w 0 . 2 0 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 0 8 k / w 0 . 0 5 k / w r = 0. 02 k/ w - d el t a r t h s a 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 180 120 90 60 30 maximum total on-s ta te power los s (w) conduction angle total rms output current (a) irk.250.. series per module t = 130c j 0 20406080100120 maximum allowable ambient temperat ure ( c) r = 0 . 0 1 k / w - d e l t a r 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0. 12 k/ w 0 . 1 6 k / w 0 . 2 0 k / w 0 . 2 5 k / w t h s a 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 maximum total power loss (w) total output current (a) 120 (rect) 3 x irk.250.. series three phase bridge connected t = 130c j
irk.170, .230, .250 series 12 bulletin i27102 rev. a 10/97 www.irf.com fig. 28 - on-state voltage drop characteristics fig. 29 - on-state voltage drop characteristics fig. 30 - on-state voltage drop characteristics fig. 31 - reverse recovery charge characteristics fig. 32 - reverse recovery charge characteristics 100 1000 10000 0.511.522.533.544.55 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 130c j irk.250.. series per junction 10 100 1000 10000 0.511.522.533.544.55 t = 25 c j instantaneous on-stat e current (a) instantaneous on-state voltage (v) irk.170.. series per junction t = 125c j 100 1000 10000 0.511.522.533.544.55 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 130c j irk.230.. series per ju nction 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060708090100 rate of fall of on-state current - di/dt (a/ s) typical reverse recovery charge - qrr ( c) i = 800 a tm 500 a 300 a 200 a 100 a irk.170.. series t = 130 c per junction j 50 a 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 102030405060708090100 typical reverse recovery charge - qrr ( c) rate of fall of on -state current - di/dt (a/ s) 500 a 300 a 200 a 100 a irk.230/ 250.. series t = 130 c per junction j i = 800 a tm 50 a
irk.170, .230, .250 series 13 bulletin i27102 rev. a 10/97 www.irf.com fig. 33 - gate characteristics fig. 34 - thermal impedance z thjc characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj =2 5 c tj =12 5 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s rectangular gate pulse <=30% rated di/dt : 10v, 20ohms (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms irk.170/ 230/ 250 series frequency limited by pg(av) (1) (4) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc irk.170.. series steady state value: r = 0.17 k/w r = 0.125 k/w (dc operation) thjc thjc transient thermal impedance z (k/w) irk.230/ 250.. series

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